High-Performance 4 x 1 multiplexer based on single-walled carbon nanotube field effect transistor with CMOS-like pass-transistor logic
High-Performance 4 x 1 multiplexer based on single-walled carbon nanotube field effect transistor with CMOS-like pass-transistor logic
In the past several years, according to many studies Carbon Nanotube Field Effect Transistor (CNTFET) shown high performance in many logic circuits due to their properties and compared with other silicon counterparts. However, ensuring these benefits still are as a challenge for nanoscale integrated circuits application. Because of its superb electrical and mechanical features, CNTFET is one of the most promising substitutes of metal–oxide–semiconductor field-effect transistor (MOSFET) technology. Although these features are suitable for implementing in various practical digital circuits, CNTFET-based circuits will solve enormous fabrication problems due to their size. Here, we show that a major simplification could be obtained by CNTFET based integrated circuits designing based on a CMOS-like pass-transistor logic configuration in the use of field effect transistors, instead of traditional Complementary Metal Oxide Semiconductor (CMOS) configuration. The CMOS-like pass transistor logic configuration creates a notable simplification of the CNTFET based circuit design, a higher circuit speed and great reduction in energy consumption. There are many issues facing while high level integrating many numbers of transistors such as short channel effect, power dissipation, scaling of the transistors and etc. To overcome these problems considering Carbon Nanotube (CNT) have promising application in the field of electronics. The simulation results presented, and the power consumption compared with the conventional CMOS designs. The comparison of results approved that the CNTFET based design is capable of efficient power savings and high-speed performance.
In the past several years, according to many studies Carbon Nanotube Field Effect Transistor (CNTFET) shown high performance in many logic circuits due to their properties and compared with other silicon counterparts. However, ensuring these benefits still are as a challenge for nanoscale integrated circuits application. Because of its superb electrical and mechanical features, CNTFET is one of the most promising substitutes of metal–oxide–semiconductor field-effect transistor (MOSFET) technology. Although these features are suitable for implementing in various practical digital circuits, CNTFET-based circuits will solve enormous fabrication problems due to their size. Here, we show that a major simplification could be obtained by CNTFET based integrated circuits designing based on a CMOS-like pass-transistor logic configuration in the use of field effect transistors, instead of traditional Complementary Metal Oxide Semiconductor (CMOS) configuration. The CMOS-like pass transistor logic configuration creates a notable simplification of the CNTFET based circuit design, a higher circuit speed and great reduction in energy consumption. There are many issues facing while high level integrating many numbers of transistors such as short channel effect, power dissipation, scaling of the transistors and etc. To overcome these problems considering Carbon Nanotube (CNT) have promising application in the field of electronics. The simulation results presented, and the power consumption compared with the conventional CMOS designs. The comparison of results approved that the CNTFET based design is capable of efficient power savings and high-speed performance.
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